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Freescale Semiconductor Technical Data
MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured.
Document Number: MRF6S9045N Rev. 4, 8/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. * Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 22.7 dB Drain Efficiency -- 32% ACPR @ 750 kHz Offset -- - 47 dBc in 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts, Full Frequency Band (921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 68% * Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Integrated ESD Protection * 225C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. * TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S9045NR1 MRF6S9045NBR1
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880 MHz, 10 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9045NR1
CASE 1337 - 04, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9045NBR1
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, + 12 - 65 to +150 150 225 Unit Vdc Vdc C C C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
MRF6S9045NR1 MRF6S9045NBR1 1
RF Device Data Freescale Semiconductor
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Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 45 W CW Case Temperature 79C, 10 W CW Symbol RJC Value (1,2) 1.0 1.1 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 A) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 350 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
On Characteristics VGS(th) VGS(Q) VDS(on) 1 2 -- 2 2.9 0.22 3 4 0.3 Vdc Vdc Vdc
Dynamic Characteristics Ciss Coss Crss -- -- -- 77 27 0.78 -- -- -- pF pF pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss MRF6S9045NR1 MRF6S9045NBR1 Gps D ACPR IRL 21 30.5 -- -- - 20 - 20 -9 -7 22.7 32 - 47 25 -- - 45 dB % dBc dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(continued)
MRF6S9045NR1 MRF6S9045NBR1 2 RF Device Data Freescale Semiconductor
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Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 16 W Avg., f = 921 - 960 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 20 46 1.5 - 62 - 78 -- -- -- -- -- dB % % dBc dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 45 W, f = 921 - 960 MHz Power Gain Drain Efficiency Input Return Loss Gps D IRL P1dB -- -- -- -- 20 68 - 12 52 -- -- -- -- dB % dB W
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Pout @ 1 dB Compression Point (f = 940 MHz)
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B1 R1 VBIAS + C15 RF INPUT R2 L2 R3 C7 L1 Z10 C5 Z1 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.215 0.221 0.500 0.460 0.040 0.280 0.087 0.435 0.057 x 0.065 x 0.065 x 0.100 x 0.270 x 0.270 x 0.270 x 0.525 x 0.525 x 0.525 C3 C4 C6 Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C9 DUT C8 Z11 Z12
B2 + C10 C16 + C17 + VSUPPLY
C18 RF Z16 OUTPUT C14
Z13
Z14
Z15
C11
C12
C13
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Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530 Taper Microstrip Microstrip Microstrip
0.360 x 0.270 Microstrip 0.063 x 0.270 Microstrip 0.360 x 0.065 Microstrip 0.095 x 0.065 Microstrip 0.800 x 0.065 Microstrip 0.260 x 0.065 Microstrip 0.325 x 0.065 Microstrip Taconic RF - 35 0.030, r = 3.5
Figure 1. MRF6S9045NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S9045NR1(NBR1) Test Circuit Component Designations and Values
Part Ferrite Bead Ferrite Bead 47 pF Chip Capacitors 0.8 - 8.0 pF Variable Capacitors, Gigatrim 15 pF Chip Capacitor 12 pF Chip Capacitors 13 pF Chip Capacitors 7.5 pF Chip Capacitor 0.6 - 4.5 pF Variable Capacitor, Gigatrim 10 F, 35 V Tantalum Capacitors 220 F, 50 V Electrolytic Capacitor 12.5 nH Inductor 1 k, 1/4 W Chip Resistor 560 k, 1/4 W Chip Resistor 12 , 1/4 W Chip Resistor Description Part Number 2743019447 2743021447 ATC100B470JT500XT 27291SL ATC100B150JT500XT ATC100B120JT500XT ATC100B130JT500XT ATC100B7R5JT500XT 27271SL T491D106K035AT EMVY500ADA221MJA0G A04T - 5 CRCW12061001FKEA CRCW12065600FKEA CRCW120612R0FKEA Manufacturer Fair Rite Fair Rite ATC Johanson ATC ATC ATC ATC Johanson Kemet Nippon Chemi - Con Coilcraft Vishay Vishay Vishay B1 B2 C1, C7, C10, C14 C2, C4, C12 C3 C5, C6 C8, C9 C11 C13 C15, C16, C17 C18 L1, L2 R1 R2 R3
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C15
R2 R3 R1
C18
VDD C16 C17 B2 C7 C5 C8 C3 C6 CUT OUT AREA C4 C10 L2
VGG
B1
L1 C1 C2
C14 C9 C11 C12 C13
TO-270/272 Surface / Bolt down
Figure 2. MRF6S9045NR1(NBR1) Test Circuit Component Layout
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TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 23 22.8 22.6 Gps, POWER GAIN (dB) 22.4 22.2 22 21.8 21.6 21.4 21.2 21 850 860 IRL ALT1 870 880 890 900 910 ACPR VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 350 mA, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13 Gps D 35 34 33 32 31 -45 -50 -55 -60 -65 -70 f, FREQUENCY (MHz)
ACPR (dBc), ALT1 (dBc)
-5 -10 -15 -20 -25 -30
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Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 10 Watts Avg.
22.6 22.4 22.2 Gps, POWER GAIN (dB) 22 21.8 21.6 21.4 IRL 21.2 21 20.8 850 ALT1 860 870 880 890 900 910 -50 -55 -60 f, FREQUENCY (MHz) VDD = 28 Vdc, Pout = 20 W (Avg.) IDQ = 350 mA, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13 ACPR 48 D 47 46 45 -35 ACPR (dBc), ALT1 (dBc) -40 -45
D, DRAIN EFFICIENCY (%)
Gps
-5 -10 -15 -20 -25 -30
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 20 Watts Avg.
24 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 520 mA 23 475 mA 350 mA 22 275 mA 21 175 mA 20 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements 19 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 -10 -20 -30 IDQ = 175 mA -40 -50 520 mA -60 -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 475 mA 275 mA 350 mA VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
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Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) -10 IMD, INTERMODULATION DISTORTION (dBc) -20 -30 -40 -50 -60 -70 -80 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 3rd Order 5th Order 7th Order VDD = 28 Vdc, IDQ = 350 mA, f1 = 880 MHz f2 = 880.1 MHz, Two-Tone Measurements 0 -10 -20 -30 -40 -50 -60 7th Order 3rd Order VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 350 mA f1 = 880 MHz, f2 = 880.1 MHz, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz
5th Order
-70 0.05 0.1
1
10
100
TWO-TONE SPACING (MHz)
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Figure 7. Intermodulation Distortion Products versus Output Power
54 53 Pout, OUTPUT POWER (dBm) 52 51 50 49 48 47 46 45 44 23 24 25 26 27 28 29 P1dB = 48.2 dBm (66.07 W) P3dB = 48.6 dBm (72.44 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
Ideal
Actual VDD = 28 Vdc, IDQ = 350 mA Pulsed CW, 8 sec(on), 1 msec(off) Center Frequency = 880 MHz 30 31 32 33
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 60 50 40 30 Gps 20 10 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. ACPR TC = 25_C -30_C -65 -75 -85 50 VDD = 28 Vdc, IDQ = 350 mA f = 880 MHz, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13 25_C ALT1 85_C D -25 25_C -35 -30_C 25_C 85_C -55 -45 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc)
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power
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TYPICAL CHARACTERISTICS
24 23 Gps, POWER GAIN (dB) 22 21 20 19 18 17 16 1 10 Pout, OUTPUT POWER (WATTS) CW D VDD = 28 Vdc IDQ = 350 mA f = 880 MHz 100 25_C 85_C TC = -30_C Gps -30_C 25_C 60 85_C 50 40 30 20 10 0 80
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Figure 11. Power Gain and Drain Efficiency versus CW Output Power
23.5 23 22.5 22 21.5 21 20.5 20 19.5 19 18.5 18 17.5 0 10 20 30 40 28 V VDD = 24 V IDQ = 350 mA f = 880 MHz 70 80 90 100 32 V
50
60
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 10 W Avg., and D = 32%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 13. MTTF Factor versus Junction Temperature MRF6S9045NR1 MRF6S9045NBR1 8 RF Device Data Freescale Semiconductor
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70 D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -3.6 -2.9 -2.2 -1.5 -0.7 0 0.7 1.5 2.2 2.9 3.6 1.2288 MHz Channel BW .. ... ..... . .. .............................. ............ ............. . . .. . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . . ............ ........... ...... .... ........ ..... ... . ....... ....... .. ... ....... . .... .... .. . . .. ......... ......... ... . ..... ...... ....... .. ..... . ..... ... ... . .... .... . ..... .... . ..... . .... ......... . .. .. . ...... .... ....... .. ........ -ACPR in 30 kHz +ACPR in 30 kHz .............. . . .. . . ... .... .......... ..... . ............... . ......... .... ........... Integrated BW Integrated BW .. ...... ............ . . ...... ... . .. .. ...... ....... ...
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Figure 14. Single - Carrier CCDF N - CDMA
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
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Zo = 5 f = 910 MHz
f = 850 MHz Zsource Zload f = 850 MHz f = 910 MHz
VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg. f MHz 850 865 880 895 910 Zsource 0.42 + j0.30 0.42 + j0.44 0.45 + j0.60 0.48 + j0.74 0.50 + j0.85 Zload 3.05 + j1.27 3.16 + j1.33 3.31 + j1.33 3.43 + j1.20 3.35 + j1.05
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
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PACKAGE DIMENSIONS
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MRF6S9045NR1 MRF6S9045NBR1 12 RF Device Data Freescale Semiconductor
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 4 Date Aug. 2008 Description * Listed replacement part and Device Migration notification reference number, p. 1 * Listed MRF6S9045NBR1 as no longer manufactured, p. 1 * Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 11 - 13. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. * Replaced Case Outline 1337 - 03 with 1337 - 04, p. 1, 14 - 16. Issue D: Removed Drain - ID label from View Y - Y on Sheet 2. Renamed E2 to E3. Added cross - hatch region dimensions D2 and E2. Added JEDEC Standard Package Number. Issue E: Corrected document number 98ASA99191D on Sheet 3. * Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 * Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table, related "Continuous use at maximum temperature will affect MTTF" footnote added and changed 200C to 225C in Capable Plastic Package bullet, p. 1 * Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added "Measured in Functional Test", On Characteristics table, p. 2 * Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 * Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 * Updated Part Numbers in Table 6 Component Designations and Values, to latest RoHS compliant part numbers, p. 4 * Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device's capabilities, p. 6 * Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 8 * Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 8 * Added Product Documentation and Revision History, p. 17
MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 17
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MRF6S9045NR1 MRF6S9045NBR1
Rev. 18 4, 8/2008 Document Number: MRF6S9045N
RF Device Data Freescale Semiconductor

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